1000mW 850nm Infrared 5.6mm TO18 Laser Diode 1W Powerful AlGaAs Semiconductor LD

Description

850nm 1000mW IR 5.6mm TO18 Laser Diode
Features:
.
Wavelength: 850nm (±5nm)
Output power: 1W
Threshold current: <600mA
Forward current: <1400mA
Forward voltage: 1.9V-2.2V
Details:
850nm AlGaAs quantum well fabricated by MOCVD semiconductor laser. Low threshold current and high slope efficiency contribute to low operating current enhancing reliability.
It is CW multi-mode injection semiconductor laser available on C-mount, B-mount and Q-mount. It's suitable for application in various opto-electronic systems.
Package:
1x 850nm 1W 5.6mm Laser Diode
Shippment:
1.Every parcel will be registered with tracking number.
2.International shipping requires complicated shipping procedures (such as both countries customs, transit stations etc.), also will be affected by many factors, such as holidays, weather conditions et. If the transportation time is not normal, please contact us